This article discusses the applications of Moore's Law in technological progress in the field of semiconductor industry for 50 years. Semiconductors play a vital role in the foundation of communications systems and form the basis of the Internet of Things (IoE). However, future predictions of Moore's Law were not considered valid after 50 years due to its ambiguous prediction since it was not a physical or natural law but a simple observation by Gordon Moore . The current scenario of increasing cost and efficiency of integrated circuits poses a challenge to the development aspect. The introduction of 3D transistors that improve the capabilities of CMOS technology leads to increasing capacities. In addition to the evolution of CMOS technology beyond 14nm, cutting-edge technology options are on the horizon beyond CMOS, with potential design advantages that can advance Moore's Law in the future.Say no to plagiarism. Get a tailor-made essay on “Why Violent Video Games Should Not Be Banned”? Get the original essay Since this article is primarily about the concept of Moore's Law, we will first define what this law is. Moore's Law states that "the number of transistors used in integrated circuits per inch doubles every year." This law gave many advantages to the field of electronic technology by further decreasing the cost of high-power equipment. Machines that applied Moore's Law were faster than those that did not apply it. The transitions that have continued in recent years, i.e. from bipolar to MOSFETS, to CMOS, to voltage scaling and to energy efficient scaling, have contributed significantly significant to the current development scenario of silicon technology. The trend of creating high-quality digital functionality from integrated analog components such as PLLs, I/O, and thermal sensors has application for improving Intel's leading technology, i.e. technology nodes from 22nm to 14nm. In contrast, microprocessor clock rates have seen relatively slow improvement over the past few decades as power-efficient parallel architectures have come into greater demand. But improvements in area density and power should also keep pace with overall system bandwidth needs. A type of solid-state memory that uses flip-flops to store bits, called static RAM, remains the workhorse for all the various VLSI applications. But voltage scaling for power efficiency has created a challenge for memory operation at lower voltages. The most advanced 14nm FINFET has improved SRAM voltages. With ever-increasing memory requirements for new applications such as high-resolution graphics and cloud computing, traditional memories are not enough. Therefore, using the capacitor in an integrated circuit that serves as a random access semiconductor memory called DRAM (Dynamic Random Access Memory) and EDRAM has been an alternative. System-level optimization is necessary to take full advantage of these new technologies as we move forward. An extension beyond the 2D scaling trajectory predicted by Moore's Law, called monolithic 3D (M-3D), has emerged as an alternative to integration technology that has significantly reduced the gaps between transistors and interconnection delays that are added to achieve high performance at low cost. But.